| PART |
Description |
Maker |
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| MJE18002G |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007-Q MJE13007G-Q-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| MJE13007L-M-TA3-T MJE13007-M MJE13007G-M-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| FA5332P FA5332PM FA5331P FA5331PM FA5332M FA5331M |
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 220 kHz SWITCHING FREQ-MAX, PDIP16
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 150 kHz SWITCHING FREQ-MAX, PDIP16
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| MB3782 MB3782P MB3782PF MB37821 |
ASSP Power Supplies BIPOLAR Switching Regulator Controller
|
Fujitsu Component Limited.
|
| BUL146-D BUL146F |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
Power 8A 400V NPN
|
ON Semiconductor
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION
|
TOSHIBA
|
| GT60M104 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
